The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Aug. 10, 2008
Po-lun Cheng, Kao-Hsiung Hsien, TW;
Pin-chien Chu, Kaohsiung County, TW;
Po-Lun Cheng, Kao-Hsiung Hsien, TW;
Pin-Chien Chu, Kaohsiung County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate. Next, the spacer is thinned, and epitaxial layer is grown in each of the two recesses. By thinning the spacer before the epitaxial layer is formed, the present invention could stop the epitaxial layer to grow against the sidewall of the spacer, thereby preventing problem such as Ion degradation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile