The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Aug. 11, 2005
Yoshiro Kabe, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A selective oxidation process is performed on a gate electrode in a plasma processing apparatus. A wafer W with the gate electrode formed thereon is placed on a susceptorwithin a chamber. Ar gas, Hgas, and Ogas are supplied from an Ar gas supply source, an Hgas supply source, and an Ogas supply sourcein a gas supply systemthrough a gas feed memberinto the chamber. At this time, a flow rate ratio H/Oof Hgas relative to Ogas is set to be 1.5 or more and 20 or less, preferably to be 4 or more, and more preferably to be 8 or more. Further, the pressure inside the chamber is set to be 3 to 700 Pa, such as 6.7 Pa (50 mTorr).