The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Aug. 13, 2008
Tien-jen Cheng, Bedford, NY (US);
Zhengwen LI, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Tien-Jen Cheng, Bedford, NY (US);
Zhengwen Li, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.