The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Dec. 28, 2007
Maud Vinet, Rives, FR;
Olivier Thomas, Revel, FR;
Olivier Rozeau, Moirans, FR;
Thierry Poiroux, Voreppe, FR;
Maud Vinet, Rives, FR;
Olivier Thomas, Revel, FR;
Olivier Rozeau, Moirans, FR;
Thierry Poiroux, Voreppe, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method for fabricating a microelectronic device with one or plural asymmetric double-gate transistors, including: a) forming one or plural structures on a substrate including at least a first semiconducting block configured to form a first gate of a double-gate transistor, and at least a second semiconducting block configured to form a second gate of the double-gate transistor, the first block and the second block being located on opposite sides of at least one semiconducting zone and separated from the semiconducting zone by a first gate dielectric zone and a second gate dielectric zone respectively, and b) doping at least one or plural semiconducting zones in the second block of at least one given structure among the structures, using at least one implantation selective relative to the first block.