The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Aug. 23, 2010
Bei Chao Zhang, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Fan Zhang, Singapore, SG;
Yong Chiang EE, Singapore, SG;
BO Tao, Singapore, SG;
Tong Qing Chen, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Fan Zhang, Singapore, SG;
Yong Chiang Ee, Singapore, SG;
Bo Tao, Singapore, SG;
Tong Qing Chen, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography.