The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
May. 05, 2005
Applicants:
Kai Frohberg, Niederau, DE;
Matthias Schaller, Boxdorf, DE;
Massud Aminpur, Hopewell Junction, NY (US);
Inventors:
Kai Frohberg, Niederau, DE;
Matthias Schaller, Boxdorf, DE;
Massud Aminpur, Hopewell Junction, NY (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/462 (2006.01);
U.S. Cl.
CPC ...
Abstract
During the formation of a metal line in a low-k dielectric material, an upper portion of a trench formed in a capping layer and the low-k dielectric material is treated to provide enlarged tapering or corner rounding, thereby significantly improving the fill capabilities of subsequent metal deposition processes. In one particular embodiment, an additional etch process is performed after etching through the capping layer and the low-k dielectric layer and after resist removal.