The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Jul. 05, 2007
Martin Gerhardt, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Markus Forsberg, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Martin Gerhardt, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Markus Forsberg, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a mesa isolation configuration for forming a transistor on a semiconductor island, an additional planarization step is performed to enhance the uniformity of the gate patterning process. In some illustrative embodiments, the gate electrode material may be planarized, for instance, on the basis of CMP, to compensate for the highly non-uniform surface topography, when the gate electrode material is formed above the non-filled isolation trenches. Consequently, significant advantages of the mesa isolation strategy may be combined with a high degree of scalability due to the enhancement of the critical gate patterning process.