The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2012

Filed:

Oct. 16, 2009
Applicants:

Ryuichi Asako, Yamanashi, JP;

Gousuke Shiraishi, Tokyo, JP;

Shigeru Tahara, Yamanashi, JP;

Inventors:

Ryuichi Asako, Yamanashi, JP;

Gousuke Shiraishi, Tokyo, JP;

Shigeru Tahara, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to COplasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing method includes: an etching process for etching a low dielectric insulating film formed on a substrate; a COplasma process for exposing the substrate to COplasma after the etching process; and a UV process for irradiating UV to the low dielectric insulating film after the COplasma process.


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