The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
May. 15, 2009
Dexter Xueming Tan, Singapore, SG;
Benjamin Colombeau, Salem, MA (US);
Clark Kuang Kian Ong, Singapore, SG;
Sai Hooi Yeong, Singapore, SG;
Chee Mang NG, Singapore, SG;
Kin Leong Pey, Singapore, SG;
Dexter Xueming Tan, Singapore, SG;
Benjamin Colombeau, Salem, MA (US);
Clark Kuang Kian Ong, Singapore, SG;
Sai Hooi Yeong, Singapore, SG;
Chee Mang Ng, Singapore, SG;
Kin Leong Pey, Singapore, SG;
Nanyang Technological University, Singapore, SG;
National University of Singapore, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is performed. The vacancy rich regions have a first depth from a surface of the substrate. A first implant causing end of range defect regions to be formed on opposing sides of the gate stack at a second depth from the surface of the substrate is also carried out, wherein the first depth is proximate to the second depth.