The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Dec. 30, 2008
Walid M. Hafez, Portland, OR (US);
Chia-hong Jan, Portland, OR (US);
Jie-feng Lin, Portland, OR (US);
Chetan Prasad, Hillsboro, OR (US);
Sangwoo Pae, Beaverton, OR (US);
Zhanping Chen, Portland, OR (US);
Anisur Rahman, Hillsboro, OR (US);
Walid M. Hafez, Portland, OR (US);
Chia-Hong Jan, Portland, OR (US);
Jie-Feng Lin, Portland, OR (US);
Chetan Prasad, Hillsboro, OR (US);
Sangwoo Pae, Beaverton, OR (US);
Zhanping Chen, Portland, OR (US);
Anisur Rahman, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A programmable anti-fuse element includes a substrate (), an N-well () in the substrate, an electrically insulating layer () over the N-well, and a gate electrode () over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element () includes a metal gate fuse () and an oxide anti-fuse () such as the programmable anti-fuse element just described.