The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2012

Filed:

Oct. 12, 2007
Applicants:

Go Noya, Kakegawa, JP;

Ryuta Shimazaki, Shizuoka, JP;

Masakazu Kobayashi, Kakegawa, JP;

Inventors:

Go Noya, Kakegawa, JP;

Ryuta Shimazaki, Shizuoka, JP;

Masakazu Kobayashi, Kakegawa, JP;

Assignee:

AZ Electronic Materials USA Corp., Somerville, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/032 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.


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