The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Oct. 24, 2007
Chih-wen Feng, Tainan County, TW;
Pei-yu Chou, Tainan County, TW;
Chun-ting Yeh, Taipe, TW;
Jyh-cherng Yau, Tainan, TW;
Jiunn-hsiung Liao, Tainan County, TW;
Feng-yi Chang, Chiayi County, TW;
Ying-chih Lin, Tainan, TW;
Chih-Wen Feng, Tainan County, TW;
Pei-Yu Chou, Tainan County, TW;
Chun-Ting Yeh, Taipe, TW;
Jyh-Cherng Yau, Tainan, TW;
Jiunn-Hsiung Liao, Tainan County, TW;
Feng-Yi Chang, Chiayi County, TW;
Ying-Chih Lin, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidewalls thereof. Next, a second etching step is performed with the patterned photoresist layer, the patterned Si-containing material layer and the polymer layer as masks to at least remove an exposed portion of a etching resistive layer to form a patterned etching resistive layer. A portion of a target material layer is removed by using the patterned etching resistive layer as an etching mask to form a first and a second openings in the target material layer. The method is characterized by controlling etching parameters of the first and second etching steps to obtain predetermined ADI-AEI CD difference ratios.