The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2012

Filed:

Feb. 27, 2006
Applicants:

Eu Jin Lim, Santa Clara, CA (US);

Chungdee Pong, Los Altos, CA (US);

Changhun Lee, San Jose, CA (US);

Mark Kawaguchi, Sunnyvale, CA (US);

Guowen Ding, San Jose, CA (US);

Inventors:

Eu Jin Lim, Santa Clara, CA (US);

Chungdee Pong, Los Altos, CA (US);

Changhun Lee, San Jose, CA (US);

Mark Kawaguchi, Sunnyvale, CA (US);

Guowen Ding, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/04 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H) and may further comprise at least one of nitrogen (N) and water (HO) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).


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