The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2012

Filed:

Aug. 31, 2006
Applicants:

Jon Henri, West Linn, OR (US);

Henner Meinhold, Fremont, CA (US);

Christopher Gage, Campbell, CA (US);

Dan Doble, Tigard, OR (US);

Inventors:

Jon Henri, West Linn, OR (US);

Henner Meinhold, Fremont, CA (US);

Christopher Gage, Campbell, CA (US);

Dan Doble, Tigard, OR (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/06 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.


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