The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Dec. 24, 2008
Applicants:

John H. Magerlein, Yorktown Heights, NY (US);

Chirag S. Patel, Peekskill, NY (US);

Edmund J. Sprogis, Underhill, VT (US);

Herbert I. Stoller, Poughkeepsie, NY (US);

Inventors:

John H. Magerlein, Yorktown Heights, NY (US);

Chirag S. Patel, Peekskill, NY (US);

Edmund J. Sprogis, Underhill, VT (US);

Herbert I. Stoller, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including metal capture structures in contact with the first surface and multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the reverse side of the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Form via holes with tapered or vertical sidewalls, which extend through the UTSW to reach the metal capture structures. Then form metal pads in the via holes which extend through the UTSW, making electrical contact to the metal capture structures. Then bond the metal pads in the via holes to pads of a carrier.


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