The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2012

Filed:

Jun. 05, 2009
Applicants:

Yue-shiun Lee, Taipei, TW;

Yuan-chang Liu, Miaoli, TW;

Cheng-hsiung Chen, Taipei, TW;

Inventors:

Yue-Shiun Lee, Taipei, TW;

Yuan-Chang Liu, Miaoli, TW;

Cheng-Hsiung Chen, Taipei, TW;

Assignee:

United Microelectronics Corp,, Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); G01R 31/02 (2006.01); G21C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement, respectively measuring tunneling currents (I) and scattering parameters (S-parameters) of the BT SOI device and the BT dummy device, subtracting Iof BT dummy device from that of the BT SOI device to obtain Iof a floating body (FB) SOI device, filtering characteristics of the BT dummy device out to extract S-parameters of the FB SOI device, and analyzing the S-parameters of the FB SOI device to obtain gate-related capacitances of the FB SOI device.


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