The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
May. 09, 2006
Yi-chun Lin, Hsinchu, TW;
Kuo-ming Wu, Hsinchu, TW;
Ruey-hsin Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device. The device comprises an active region isolated by an isolation structure on a substrate. The device further comprises a gate electrode extending across the active area and overlying the substrate, a pair of source region and drain region, disposed on either side of the gate electrode on the substrate in the active area, and a gate dielectric layer disposed between the substrate and the gate electrode. The gate dielectric layer comprises a relatively-thicker high voltage (HV) dielectric portion and a relatively-thinner low voltage (LV) dielectric portion, wherein the HV dielectric portion occupies a first intersection among the drain region, the isolation structure, and the gate electrode, and a second intersection among the source region, the isolation structure, and the gate electrode.