The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Apr. 25, 2007
Masahiro Omachi, Toyama, JP;
Akira Fukui, Toyama, JP;
Toshiya Ikeda, Toyama, JP;
A.L.M.T. Corp., Tokyo, JP;
Abstract
A heat sink substrate has a composite structure including a three-dimensional network structure of SiC ceramic having pores infiltrated with Si, and has a thermal conductivity of not less than 150 W/m·K and an oxygen content of not greater than 7 ppm. The heat sink substrate is easily allowed to have an increased surface area. Further, the heat sink substrate has a higher thermal conductivity and a coefficient thermal expansion close to that of the SiC. Therefore, the heat sink substrate is superior in the efficiency of heat conduction from a semiconductor device. The heat sink substrate is produced by infiltrating a thermally melted Si into the pores of the three-dimensional network structure in a non-oxidative atmosphere in the presence of an oxygen absorber.