The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Oct. 14, 2009
Kazyuki Hayashi, Chiyoda-ku, JP;
Kazuo Kadowaki, Chiyoda-ku, JP;
Masaki Mikami, Chiyoda-ku, JP;
Takashi Sugiyama, Chiyoda-ku, JP;
Kazyuki Hayashi, Chiyoda-ku, JP;
Kazuo Kadowaki, Chiyoda-ku, JP;
Masaki Mikami, Chiyoda-ku, JP;
Takashi Sugiyama, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Abstract
Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.