The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2012

Filed:

Aug. 29, 2005
Applicants:

Brad Lemon, Battle Creek, MI (US);

Joseph Hirt, Coldwater, MI (US);

Timothy Welling, Portage, MI (US);

James G. Daily, Iii, Marshall, MI (US);

David Meendering, Coldwater, MI (US);

Gary Rozak, Akron, OH (US);

Jerome O'grady, Hudson Village, OH (US);

Peter R. Jepson, Newbury, MA (US);

Prabhat Kumar, Framingham, MA (US);

Steven A. Miller, Canton, MA (US);

Richard Wu, Chelmsford, MA (US);

Davd G. Schwarz, Mentor, OH (US);

Inventors:

Brad Lemon, Battle Creek, MI (US);

Joseph Hirt, Coldwater, MI (US);

Timothy Welling, Portage, MI (US);

James G. Daily, III, Marshall, MI (US);

David Meendering, Coldwater, MI (US);

Gary Rozak, Akron, OH (US);

Jerome O'Grady, Hudson Village, OH (US);

Peter R. Jepson, Newbury, MA (US);

Prabhat Kumar, Framingham, MA (US);

Steven A. Miller, Canton, MA (US);

Richard Wu, Chelmsford, MA (US);

Davd G. Schwarz, Mentor, OH (US);

Assignee:

H.C. Starck Inc., Newton, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 27/04 (2006.01); C25B 9/00 (2006.01); C23C 14/00 (2006.01); B22F 3/24 (2006.01); B32B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.


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