The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Sep. 09, 2009
Hiroshi Kanno, Kawasaki, JP;
Kenichi Murooka, Yokohama, JP;
Jun Hirota, Yokohama, JP;
Hideyuki Tabata, Kawasaki, JP;
Hiroshi Kanno, Kawasaki, JP;
Kenichi Murooka, Yokohama, JP;
Jun Hirota, Yokohama, JP;
Hideyuki Tabata, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The rectifier element includes a p type first semiconductor region, and a n type second semiconductor region. The first semiconductor region is formed of, at least in part, silicon-germanium mixture (SiGe(0<x<=1)). The second semiconductor region is formed of silicon (Si).