The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Dec. 23, 2010
Tadashi Yamaguchi, Tokyo, JP;
Koyu Asai, Tokyo, JP;
Mahito Sawada, Tokyo, JP;
Kiyoteru Kobayashi, Tokyo, JP;
Tatsunori Murata, Tokyo, JP;
Satoshi Shimizu, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
Koyu Asai, Tokyo, JP;
Mahito Sawada, Tokyo, JP;
Kiyoteru Kobayashi, Tokyo, JP;
Tatsunori Murata, Tokyo, JP;
Satoshi Shimizu, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.