The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jan. 26, 2010
John C. Arnold, North Chatham, NY (US);
Xuefeng Hua, Guilderland, NY (US);
Rangarajan Jagannathan, Hopewell Junction, NY (US);
Stefan Schmitz, Malta, NY (US);
John C. Arnold, North Chatham, NY (US);
Xuefeng Hua, Guilderland, NY (US);
Rangarajan Jagannathan, Hopewell Junction, NY (US);
Stefan Schmitz, Malta, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In an embodiment, a method of fabricating a transistor device comprises: providing a semiconductor topography comprising a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers; anisotropically etching exposed regions of the semiconductor substrate on opposite sides of the dielectric spacers to form recessed regions in the substrate; oxidizing exposed surfaces of the substrate in the recessed regions to form an oxide thereon; removing the oxide from bottoms of the recessed regions while retaining the oxide upon sidewalls of the recessed regions; and isotropically etching the substrate such that the recessed regions undercut the pair of dielectric spacers.