The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

Jul. 13, 2009
Applicants:

Lu-ping Chiang, Hsinchu, TW;

Hsiu-han Liao, Hsinchu, TW;

Inventors:

Lu-Ping Chiang, Hsinchu, TW;

Hsiu-Han Liao, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory is described, which includes gate structures, doped regions, second spacers and contact plugs. The gate structures are disposed on the substrate, each of which includes a control gate and a gate dielectric layer. The control gates are disposed on the substrate, and two first spacers are deployed at both sides of each control gate. The gate dielectric layers are disposed between the control gates and the substrate, respectively. Each of the doped regions is formed in the substrate between two adjacent gate structures. The second spacers are disposed on the sidewalls of the gate structures. The contact plugs are formed between two adjacent second spacers, respectively.


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