The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Mar. 24, 2009
Kosei Sugawara, Nishishirakawa, JP;
Ryoji Hoshi, Nishishirakawa, JP;
Masanori Takazawa, Nishishirakawa, JP;
Yuuichi Miyahara, Echizen, JP;
Atsushi Iwasaki, Echizen, JP;
Kosei Sugawara, Nishishirakawa, JP;
Ryoji Hoshi, Nishishirakawa, JP;
Masanori Takazawa, Nishishirakawa, JP;
Yuuichi Miyahara, Echizen, JP;
Atsushi Iwasaki, Echizen, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.