The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Apr. 16, 2010
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
Navab Singh, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Shen Nansheng, Singapore, SG;
Rukmani Devi Sayanthan, Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Tomohiko Kudo, Tokyo, JP;
Navab Singh, Singapore, SG;
Kavitha Devi Buddharaju, Singapore, SG;
Shen Nansheng, Singapore, SG;
Rukmani Devi Sayanthan, Singapore, SG;
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer.