The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jan. 06, 2009
Jaione Tirapu Azpiroz, Poughkeepsie, NY (US);
Alan E. Rosenbluth, Yorktown Heights, NY (US);
Ioana Graur, Poughkeepsie, NY (US);
Jaione Tirapu Azpiroz, Poughkeepsie, NY (US);
Alan E. Rosenbluth, Yorktown Heights, NY (US);
Ioana Graur, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography, is provided. An isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask.