The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8076240 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 13, 2011

Filed:

Nov. 10, 2008
Applicants:

Anh Ngoc Duong, Union City, CA (US);

Chi-l Lang, Sunnyvale, CA (US);

Inventors:

Anh Ngoc Duong, Union City, CA (US);

Chi-l Lang, Sunnyvale, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.


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Duong, Anh. (2011). Techniques to improve characteristics of processed semiconductor substrates (U.S. Patent No. 8076240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8076240

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