The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Sep. 07, 2009
Lian-hua Shih, Chiayi, TW;
Yi-ching Wu, Kao-Hsiung Hsien, TW;
Jiann-fu Chen, Hsin-Chu, TW;
Ming-te Chen, Tai-Chung Hsien, TW;
Chin-jen Cheng, Taipei, TW;
Lian-Hua Shih, Chiayi, TW;
Yi-Ching Wu, Kao-Hsiung Hsien, TW;
Jiann-Fu Chen, Hsin-Chu, TW;
Ming-Te Chen, Tai-Chung Hsien, TW;
Chin-Jen Cheng, Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.