The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Apr. 07, 2009
Kian Kiat Lim, Singapore, SG;
Atsushi Nakamura, Kazo, JP;
Kai Pheng Tan, Singapore, SG;
Eng Soon Lim, Singapore, SG;
Poh Ling Fu, Singapore, SG;
Takaaki Kamimura, Fukaya, JP;
Kian Kiat Lim, Singapore, SG;
Atsushi Nakamura, Kazo, JP;
Kai Pheng Tan, Singapore, SG;
Eng Soon Lim, Singapore, SG;
Poh Ling Fu, Singapore, SG;
Takaaki Kamimura, Fukaya, JP;
Toshiba Matsushita Display Technology Co., Ltd., Tokyo, JP;
Abstract
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.