The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 17, 2007
Tatehito Usui, Chiyoda, JP;
Motohiko Yoshigai, Hikari, JP;
Kazuhiro Jyouo, Kudamatsu, JP;
Tetsuo Ono, Iruma, JP;
Tatehito Usui, Chiyoda, JP;
Motohiko Yoshigai, Hikari, JP;
Kazuhiro Jyouo, Kudamatsu, JP;
Tetsuo Ono, Iruma, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer; detecting a first time point at which the detected quantity of interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of interference lights for the other wavelength becomes a minimum; determining a state of etching based on a result of comparing a predetermined value with an interval between the first and second time points, wherein both time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and controlling etching in accordance with the determining.