The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Sep. 30, 2005
Junichi Kitagawa, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Junichi Kitagawa, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Tokyo Electron Limited, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
Abstract
A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.