The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Oct. 08, 2009
Pin-chien Chu, Kaohsiung County, TW;
Shin-chi Chen, Penghu County, TW;
Po-lun Cheng, Kao-Hsiung Hsien, TW;
Pin-Chien Chu, Kaohsiung County, TW;
Shin-Chi Chen, Penghu County, TW;
Po-Lun Cheng, Kao-Hsiung Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile