The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2011

Filed:

Aug. 15, 2007
Applicants:

Sakae Koyata, Tokyo, JP;

Tomohiro Hashii, Tokyo, JP;

Katsuhiko Murayama, Tokyo, JP;

Kazushige Takaishi, Tokyo, JP;

Takeo Katoh, Tokyo, JP;

Inventors:

Sakae Koyata, Tokyo, JP;

Tomohiro Hashii, Tokyo, JP;

Katsuhiko Murayama, Tokyo, JP;

Kazushige Takaishi, Tokyo, JP;

Takeo Katoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.


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