The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Mar. 12, 2009
Jui-fang Chen, Taichung County, TW;
Cheng-hung Chang, Hsinchu, TW;
Chung-jung Chen, Hsinchu, TW;
Chih-ming Yang, Taipei County, TW;
Chien-kuo Ko, Hsinchu, TW;
Jui-Fang Chen, Taichung County, TW;
Cheng-Hung Chang, Hsinchu, TW;
Chung-Jung Chen, Hsinchu, TW;
Chih-Ming Yang, Taipei County, TW;
Chien-Kuo Ko, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.