The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Feb. 20, 2004
Takashi Ozaki, Tokyo, JP;
Tomoshi Taniyama, Tokyo, JP;
Hiroshi Unami, Tokyo, JP;
Kiyohiko Maeda, Tokyo, JP;
Shinya Morita, Tokyo, JP;
Yoshikazu Takashima, Tokyo, JP;
Sadao Hisakado, Tokyo, JP;
Takashi Ozaki, Tokyo, JP;
Tomoshi Taniyama, Tokyo, JP;
Hiroshi Unami, Tokyo, JP;
Kiyohiko Maeda, Tokyo, JP;
Shinya Morita, Tokyo, JP;
Yoshikazu Takashima, Tokyo, JP;
Sadao Hisakado, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A CVD device has a reaction furnace () for processing a wafer (); a seal cap () for sealing the reaction furnace () hermetically; an isolation flange () opposite to the seal cap (); a small chamber () formed by the seal cap (), the isolation flange (), and the wall surface in the reaction furnace (); a feed pipe () for supplying a first gas to the small chamber (); an outflow passage () provided in the small chamber () for allowing the first gas to flow into the reaction furnace (); and a feed pipe () provided downstream from the outflow passage () for supplying a second gas into the reaction furnace (). Byproducts such as NHCl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.