The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Dec. 14, 2008
Tadanobu Inoue, Kanagawa-ken, JP;
David O. Melville, New York, NY (US);
Hidemasa Muta, Tokyo-to, JP;
Kehan Tian, Poughkeepsie, NY (US);
Masahura Sakamoto, Kanagawa-ken, JP;
Alan E. Rosenbluth, Yorktown Heights, NY (US);
Tadanobu Inoue, Kanagawa-ken, JP;
David O. Melville, New York, NY (US);
Hidemasa Muta, Tokyo-to, JP;
Kehan Tian, Poughkeepsie, NY (US);
Masahura Sakamoto, Kanagawa-ken, JP;
Alan E. Rosenbluth, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, unknown;
Abstract
The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.