The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Dec. 14, 2008
Applicants:

Tadanobu Inoue, Kanagawa-ken, JP;

David O. Melville, New York, NY (US);

Hidemasa Muta, Tokyo-to, JP;

Kehan Tian, Poughkeepsie, NY (US);

Masahura Sakamoto, Kanagawa-ken, JP;

Alan E. Rosenbluth, Yorktown Heights, NY (US);

Inventors:

Tadanobu Inoue, Kanagawa-ken, JP;

David O. Melville, New York, NY (US);

Hidemasa Muta, Tokyo-to, JP;

Kehan Tian, Poughkeepsie, NY (US);

Masahura Sakamoto, Kanagawa-ken, JP;

Alan E. Rosenbluth, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.


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