The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Mar. 10, 2008
Chung-long Chang, Dou-Liu, TW;
Ming-shih Yeh, Chupei, TW;
Chia-yi Chen, Hsin-Chu, TW;
David Ding-chung LU, Hsin-Chu, TW;
Chung-Long Chang, Dou-Liu, TW;
Ming-Shih Yeh, Chupei, TW;
Chia-Yi Chen, Hsin-Chu, TW;
David Ding-Chung Lu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hisn-Chu, TW;
Abstract
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.