The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Feb. 02, 2010
Applicants:
Se-aug Jang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Kwan-yong Lim, Ichon-shi, KR;
Tae-yoon Kim, Ichon-shi, KR;
Inventors:
Se-Aug Jang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Tae-Yoon Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.