The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Sep. 27, 2007
Benjamin Colombeau, Singapore, SG;
Sai Hooi Yeong, Singapore, SG;
Francis Benistant, Singapore, SG;
Bangun Indajang, Singapore, SG;
Lap Chan, Singapore, SG;
Benjamin Colombeau, Singapore, SG;
Sai Hooi Yeong, Singapore, SG;
Francis Benistant, Singapore, SG;
Bangun Indajang, Singapore, SG;
Lap Chan, Singapore, SG;
National University of Singapore, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with excess vacancies and the lower region is an amorphous region. Source/drain diffusion regions are disposed in the halo regions. The source/drain diffusion regions overlap the upper and lower halo regions. This architecture offers the minimal extension resistance as well as minimum lateral diffusion for better CMOS device scaling.