The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Feb. 21, 2008
Scott David Halle, Hopewell Junction, NY (US);
Wu-song Huang, Brewster, NY (US);
Ranee Wai-ling Kwong, Wappingers Falls, NY (US);
Pushkara R. Varanasi, Poughkeepsie, NY (US);
Scott David Halle, Hopewell Junction, NY (US);
Wu-Song Huang, Brewster, NY (US);
Ranee Wai-Ling Kwong, Wappingers Falls, NY (US);
Pushkara R. Varanasi, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.