The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Feb. 23, 2009
Michael Hargrove, Clinton Corners, NY (US);
Richard J. Carter, Hopewell Junction, NY (US);
Ying H Tsang, Newburgh, NY (US);
George Kluth, Hopewell Junction, NY (US);
Kisik Choi, Hopewell Junction, NY (US);
Michael Hargrove, Clinton Corners, NY (US);
Richard J. Carter, Hopewell Junction, NY (US);
Ying H Tsang, Newburgh, NY (US);
George Kluth, Hopewell Junction, NY (US);
Kisik Choi, Hopewell Junction, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.