The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Jun. 08, 2009
Applicants:

Yung-sung Yen, Hsin-Chu, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chien-wen Lai, Hsin-Chu, TW;

Cherng-shyan Tsay, Toufen Town, TW;

Inventors:

Yung-Sung Yen, Hsin-Chu, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chien-Wen Lai, Hsin-Chu, TW;

Cherng-Shyan Tsay, Toufen Town, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.


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