The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Aug. 30, 2006
Applicants:

Michiaki Kobayashi, Kudamatsu, JP;

Tsutomu Nakamura, Hikari, JP;

Takeo Uchino, Kudamatsu, JP;

Akitaka Makino, Hikari, JP;

Masashi Nakagome, Yokohama, JP;

Inventors:

Michiaki Kobayashi, Kudamatsu, JP;

Tsutomu Nakamura, Hikari, JP;

Takeo Uchino, Kudamatsu, JP;

Akitaka Makino, Hikari, JP;

Masashi Nakagome, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); C23C 16/00 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.


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