The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Sep. 27, 2007
Applicants:
Takashi Kobayashi, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Inventors:
Takashi Kobayashi, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.