The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Feb. 25, 2008
Masanobu Hatanaka, Susono, JP;
Kanako Tsumagari, Susono, JP;
Michio Ishikawa, Susono, JP;
Ulvac, Inc., Chigasaki-shi, Kanagawa, JP;
Abstract
A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer () on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.