The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
May. 24, 2010
Shin-yu Nieh, Taoyuan County, TW;
Shuo-che Chang, Taoyuan County, TW;
Hui-lan Chang, Taoyuan County, TW;
Cheng-shun Chen, Taoyuan County, TW;
Shin-Yu Nieh, Taoyuan County, TW;
Shuo-Che Chang, Taoyuan County, TW;
Hui-Lan Chang, Taoyuan County, TW;
Cheng-Shun Chen, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for seamless gap filling is provided, including providing a semiconductor structure with a device layer having a gap therein, wherein the gap has an aspect ratio greater than 4. A liner layer is formed over the device layer exposed by the gap. A first un-doped oxide layer is formed over the liner layer in the gap. A doped oxide layer is formed over the first undoped oxide layer in the gap. A second un-doped oxide layer is formed over the doped oxide layer in the gap to fill the gap. An annealing process is performed on the second un-doped oxide layer, the doped oxide layer, and the first un-doped oxide to form a seamless oxide layer in the gap, wherein the seamless oxide layer has an interior doped region.