The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Nov. 16, 2009
Andrew Clark, Palo Alto, CA (US);
Robin Smith, Palo Alto, CA (US);
Richard Sewell, Palo Alto, CA (US);
Scott Semans, Palo Alto, CA (US);
F. Erdem Arkun, Palo Alto, CA (US);
Michael Lebby, Palo Alto, CA (US);
Andrew Clark, Palo Alto, CA (US);
Robin Smith, Palo Alto, CA (US);
Richard Sewell, Palo Alto, CA (US);
Scott Semans, Palo Alto, CA (US);
F. Erdem Arkun, Palo Alto, CA (US);
Michael Lebby, Palo Alto, CA (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.