The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Aug. 12, 2009
Sunfei Fang, LaGrangeville, NY (US);
Randolph F. Knarr, Putnam Valley, NY (US);
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Christian Lavoie, Ossining, NY (US);
Renee T. MO, Briarcliff Manor, NY (US);
Balasubramanian Pranatharthiharan, Elmsford, NY (US);
Jay W. Strane, Wappingers Falls, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Randolph F. Knarr, Putnam Valley, NY (US);
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Christian Lavoie, Ossining, NY (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Balasubramanian Pranatharthiharan, Elmsford, NY (US);
Jay W. Strane, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.